BGA 7L1BN6 E6327

BGA7L1BN6 Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1, 2017-03-03 RF & Protection Devices Edition 2017-03-03 Published by Infineon Technologies AG 81726 Munich, Germany © 2017 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA7L1BN6 Revision History Page or Item Subjects (major changes since previous revision) Revision 3.1, 2017-03-03 all Initial final version Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 3.1, 2017-03-03 BGA7L1BN6 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data Sheet 4 Revision 3.1, 2017-03-03 BGA7L1BN6 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Data Sheet Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Schematic BGA7L1BN6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 13 5 Revision 3.1, 2017-03-03 BGA7L1BN6 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Data Sheet Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VC,ON = 2.8 V, VC,BYP = 0 V, f = 716 - 960 MHz ... .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision 3.1, 2017-03-03 Silicon Germanium Low Noise Amplifier for LTE BGA7L1BN6 Features • • • • • • • • • • • • • Insertion power gain: 13.6 dB Low noise figure: 0.75 dB Low current consumption: 4.9 mA Insertion Loss in bypass mode: -2.2 dB Operating frequencies: 716 - 960 MHz Two-state control: Bypass- and High gain-Mode Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary Pb-free (RoHS compliant) package Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. VCC C AI AO ESD GND BGA7L1BN6_Blockdiagram.vsd Figure 1 Block Diagram Product Name Marking Package BGA7L1BN6 K TSNP-6-2 Data Sheet 7 Revision 3.1, 2017-03-03 BGA7L1BN6 Features Description The BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0.75 dB noise figure at a current consumption of 4.9 mA in the application configuration described in Chapter 3. In bypass mode the LNA provides an insertion loss of -2.2dB. The BGA7L1BN6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down Vcc. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 C Control Data Sheet 8 Revision 3.1, 2017-03-03 BGA7L1BN6 Maximum Ratings 1 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC -0.3 – 5.0 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin C VC -0.3 – VCC + 0.3 V – Voltage at GND pins VGND -0.3 – 0.3 V – Current into pin VCC ICC – – 50 mA – RF input power PIN – – +25 dBm – Total power dissipation, Ptot – – 250 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – TS < 148 °C2) 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Data Sheet 9 Revision 3.1, 2017-03-03 BGA7L1BN6 Electrical Characteristics 2 Electrical Characteristics Table 3 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VC,ON = 2.8 V, VC,BYP = 0 V, f = 716 - 960 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC – 4.9 5.9 mA High gain mode – 87 120 µA Bypass mode – 110 150 µA Bypass mode / VCC = 5.0 V 1.0 – VCC V High gain mode 0 – 0.4 V Bypass mode 12.1 13.6 15.1 dB High gain mode -3.2 -2.2 -1.2 dB Bypass mode – 0.75 1.3 dB High gain mode – 1.8 2.8 dB Bypass mode 9 12 – dB High gain mode 6 9 – dB Bypass mode 10 13 – dB High gain mode 5 8 – dB Bypass mode 17 21 – dB High gain mode -3.2 -2.2 – dB Bypass mode – 3 6 μs Bypass- to HG-mode – 0.2 0.3 μs HG- to Bypass-mode -3 -1 – dBm High gain mode +2 +6 – dBm Bypass mode Inband input 3 -order intercept IIP3 point4) f1 = 840 MHz, f2 = f1 + 1 MHz 0 +5 – dBm High gain mode +13 +18 – dBm Bypass mode Phase shift PS -5 0 5 ° High gain mode and bypass mode Stability k >1 – – Control voltage VC 2 Insertion power gain f = 840 MHz Noise figure ZS = 50 Ω |S21| 2) NF Input return loss f = 840 MHz RLin Output return loss f = 840 MHz RLout 2 Reverse isolation 1/|S12| 3) Power gain settling time tS Inband input 1dB-compression IP1dB point, f = 840 MHz rd 1) 2) 3) 4) f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain High gain mode: Input power = -30 dBm for each tone / Bypass mode: Input power = -10 dBm for each tone Data Sheet 10 Revision 3.1, 2017-03-03 BGA7L1BN6 Application Information 3 Application Information Application Board Configuration N1 BGA7L1BN6 AO, 3 GND, 4 C1 RFout L1 RFin Ctrl VCC VCC, 2 AI, 5 C2 (optional) GND, 1 C, 6 BGA7L1BN6_Schematic.vsd Figure 2 Application Schematic BGA7L1BN6 Table 4 Bill of Materials Name Value Package Manufacturer Function C1 1nF 0402 Various DC block 1) C2 (optional) ≥ 1nF 0402 Various RF bypass 2) L1 11nH 0402 Murata LQW type Input matching N1 BGA7L1BN6 TSNP-6-2 Infineon SiGe LNA 1) DC block might be necessary due to internal LNA bias voltage @ AI (LNA Analog Input pin). The DC block can be realized with pre-filter (e.g. SAW) 2) RF bypass recommended to mitigate power supply noise Note: No external DC blocking capacitor at RFout is required in typical applications as long as no DC is applied. A list of all application notes is available at http://www.infineon.com/ltelna Data Sheet 11 Revision 3.1, 2017-03-03 BGA7L1BN6 Package Information Package Information Bottom view +0.025 0.375 -0.015 0.7 ±0.05 0.02 MAX. 0.2 ±0.05 1) 0.8 ±0.05 3 4 2 5 1 6 0.4 ±0.05 Pin 1 marking 1) Dimension applies to plated terminals Figure 3 1.1 ±0.05 Top view 0.2 ±0.05 1) 4 TSNP-6-2-PO V01 TSNP-6-2 Package Outline (top, side and bottom views) NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSNP-6-2-FP V01 Figure 4 Footprint Recommendation TSNP-6-2 1 Type code Monthly data code Pin 1 marking TSNP-6-2-MK V01 Figure 5 Data Sheet Marking Layout (top view) 12 Revision 3.1, 2017-03-03 BGA7L1BN6 Package Information 1.25 Pin 1 marking 8 0.5 2 0.85 TSNP-6-2-TP V01 Figure 6 Data Sheet Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) 13 Revision 3.1, 2017-03-03 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG